Sanoh began a gallium nitride (GaN) semiconductor substrate processing service in July 2021.
What Is GaN?
GaN is a material with the potential to increase the efficiency, reduce the size and decrease the weight of semiconductor devices. GaN is advantageous in application to devices in the light source and telecommunications fields compared to the current mainstream semiconductor material of silicon. Moreover, GaN makes it possible to reduce the power consumption of devices. Therefore, it is a key technology for the realization of a low-carbon society.
Sanoh’s GaN Technological Development
Sanoh has participated in the Solid State Lighting & Energy Electronics Center at the University of California Santa Barbara since 2016. We have engaged in research on GaN lasers at that center. In addition, we have been conducting joint research on next-generation semiconductor substrate processing with Nagaoka University of Technology since 2018. We started consignment processing of wide bandgap semiconductor substrates based on the results of these R&D projects.
Contract Substrate Processing Services
Sanoh undertakes grinding and polishing after GaN crystal growth, wafer reclaim and development support for wafer processing from small lots. We provide high-quality substrate processing services cultivated through joint research with universities.
We will develop this service to also include difficult-to-process materials such as aluminum nitride (AlN) and silicon carbide (SiC) in addition to GaN. Moreover, we will also work on developing substrate processing technology toward 4-inch φ and 6-inch φ difficult-to-process materials. We will aim to spread energy-saving semiconductor devices and consequently to contribute to the realization of a low-carbon society by providing high-quality substrate processing services.
*Reclaim is a service to reprocess substrates used when manufacturing devices to ensure they have the same quality as before they were used. It is possible to reduce costs by reusing substrates.
Inquiries about this matter: Technology Headquarters Research and Development Division (E-mail: firstname.lastname@example.org)